Description

As an Analog Designer at Micron's Shanghai Design Center, you will work in a highly innovative and motivated design team using state of the art memory technologies to develop advanced NAND Flash Memory or DRAM. You will participate in VLSI circuit design and verification in the circuit areas such as data paths, control logic, IO circuit, charge pumps, regulators, bandgaps, op-amps, comparators and oscillators. You will also work closely with Micron's various design teams in US and other countries and leverage vast resources available through out Micron's global sites. Additionally, you will provide layout supervision, as well as optimize layout throughout post-layout simulations. As part of a multi-disciplinary team, you will participate in system-level modeling and simulation.

Qualifications

Successful candidates for this position will have:
- An in-depth knowledge of device physics.
- 3 years of experience 
- Strong analog design skills. 
- Process background.
- A high level of self-motivation. 
- The ability to be a team player. 
- Experience with memory design, such as SRAM, DRAM, and CAM (preferred).
- Familiarity with the Cadence design environment. 
- Experience with transistor-level simulators such as SPICE. 
Experience with circuits such as charge pumps, regulators, voltage and current references, op-amps, comparators, oscillators, IOs. 
- The ability to write RTL code and participate in logic verification is a plus.

Education

MS in Microelectronics is required (PhD preferred).